The intrinsic carrier concentration `n _{i}` in silicon at an absolute temperature

`T`can be approximated by

where `A _{1}` = 3.1×10

^{16}K

^{-3/2}·cm

^{-3}and

`A`= 7000 K.

_{2}Use the calculator below to see the effects of changing the temperature and/or the parameters on the intrinsic carrier concentration.

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### References

- Operation and Modeling of the MOS Transistor

Yannis Tsividis, Colin McAndrew

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