Stephen John Sque
2007–present: Principal Scientist, NXP Semiconductors, Eindhoven, The Netherlands
- Device physicist, performing TCAD simulations of high-voltage/high-power semiconductor devices
- Studying GaN HEMTs and silicon LDMOS transistors for device optimisation
- Developing physics-based compact transistor models (a.k.a. SPICE models) for circuit simulation
- Focus on high-voltage/high-power LDMOS (SOI and bulk-silicon) device modelling
- On-wafer characterisation of high-voltage Si devices
- DC I–V, AC C–V, and RF S-parameter measurements
2005–2007: Research Fellow in Physics, University of Exeter, U.K.
- Performed supercomputer calculations to determine the atomic and electronic structure of materials for nanotechnology
- Focussed on: carbon nanotubes, graphene/graphite, and diamond
- Studied the adsorption of organic molecules on biocompatible substrates
2002–2005: Ph.D. in Physics, University of Exeter, U.K.
- Studied defects in semiconductor materials, primarily through computational modelling
- Predicted the effects of atomic-scale impurities in crystalline materials
- Investigated the contamination of semiconductor and metal surfaces
- Developed the use of fullerene adsorbates to alter substrate electronic properties
- Materials studied include: diamond, aluminium/boron nitride, and various metals
- Ph.D. thesis: A First-Principles Study on Bulk and Transfer Doping of Diamond
1998–2002: Master's Degree in Physics, University of Exeter, U.K.
- Experimental and theoretical physics degree
- Master's project involved the study of electro- and magneto-rheological fluids
Ph.D. thesis and full list of papers and presentations available at http://www.stevesque.com/publications/.